bc817-16/-25/40 300mw, npn small signal transistor small signal diode ? surface device type mounting ? moisture sensitivity level 1 ? matte tin(sn) lead finish with nickel(ni) underplate ? pb free version and rohs compliant min max min max 2.80 3.00 0.110 0.118 1.20 1.40 0.047 0.055 ? case : sot- 23 small outline plastic package 0.30 0.50 0.012 0.020 1.80 2.00 0.071 0.079 2.25 2.55 0.089 0.100 0.90 1.20 0.035 0.047 0.08 0.19 0.003 0.007 part no. packing code package packing bc817-16/-25/-40 rf sot-23 3k / 7" reel bc817-16/-25/-40 rfg sot-23 3k / 7" reel maximum ratings electrical characteristics i c = 10 ai e =0 i c = 10ma i b =0 i e = 1 ai c =0 i cb = 45v i e =0 v eb = 4v i c =0 i c = 500ma i b =50ma i c = 500ma i b =50ma v ce = 5v i c = 10ma f=100mhz v r = 0v f=1.0mhz v ce = 1v i c = 100ma v ce = 1v i c = 100ma notes: 1.the suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application. >40 >40 100-250 160-400 250-600 h fe 0.1 0.1 0.7 1.2 100 10 100 - 600 c j h fe a a v v mhz pf i cbo >40 v ce(sat) v be(sat) transition frequency f t dc current gain dc current gain thermal reistance (junction to ambient) collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current emitter cut-off current junction capacitance base-emitter saturation voltage 388 c collector-emitter saturation voltage v (br)ebo 5v v (br)ceo 45 v i ebo v (br)cbo 50 v type number symbol units bc817-16 bc817-25 bc817-40 t stg -55 to + 150 c storage temperature range sot-23 type number symbol ? low power loss, high current capability, low v f ? weight : 0.008gram (approximately) maximum ratings and electrical characteristics unit (mm) 5 300 collector-base voltage collector-emitter voltage v cbo v ceo power dissipation p d unit (inch) dimensions suggested pad layou t a 0.550 ref 0.022 ref h v 50 rating at 25c ambient temperature unless otherwise specified. features mechanical data ? green compound (halogen free) with suffix "g" on packing code and prefix "g" on date code junction temperature ordering information ? high temperature soldering guaranteed: 260c/10s ? terminal: matte tin plated, lead free, solderable per mil-std-202, method 208 guaranteed t j v ebo collector current i c emitter-base voltage r ja units c 500 150 ma mw v value v 45 b c d g f e 2.0 0.079 0.95 0.037 0.9 0.035 0.8 0.031 a b c d f e g h 1 2 3 1. 2. 3. version : f10
bc817-16/-25/-40 300mw, npn small signal transistor small signal diode rating and characteristic curves fig 1 typical pulsed current gain vs collector current 0.001 0.01 0.1 1 10 0 100 200 300 400 500 ic, collector current (a) ambient temperature (c) reverse voltage (v) fig 2 collector-emitter saturation voltage vs collector current 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 ic, collector current (ma) v ce =5 25 o c h fe v ce(sat), collector-emitter voltage (v) fig 3 base-emitter saturation voltage vs collector current 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 ic, collector current (ma) v be(sat), base-emitter voltage (v) 25 o c 25 o c fig 4 base-emitter on voltage vs collector current 0.001 0.01 0.1 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 ic, collector current (a) 25 o v be(sat), base-emitter on voltage (v) fig 5 collector-base capacitance vs collector-base voltage 0 10 20 30 40 0 4 8 12 16 20 24 28 collector-base capactiance (pf) v cb, collector-base voltage (v) version : f10
|
